IEEE - Institute of Electrical and Electronics Engineers, Inc. - Improving the quality of sub-1.5-nm-thick oxynitride gate dielectric for FETs with narrow channel and shallow-trench isolation using radical oxygen and nitrogen

Author(s): M. Togo ; K. Watanabe ; M. Terai ; T. Yamamoto ; T. Fukai ; T. Tatsumi ; T. Mogami
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2002
Volume: 49
Page Count: 6
Page(s): 1,736 - 1,741
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2002.802634
Regular:

We have demonstrated that oxynitridation using radical-oxygen (radical-O) and radical-nitrogen (radical-N) improves reverse narrow channel effects (RNCE) and reliability in sub-1.5-nm-thick... View More

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