IEEE - Institute of Electrical and Electronics Engineers, Inc. - Plasma-charging effects on submicron MOS devices

Author(s): Pei-Jer Tzeng ; Y.-Y.I. Chang ; Chun-Chen Yeh ; Chih-Chiang Chen ; Chien-Hung Liu ; Mu-Yi Liu ; Bone-Fong Wu ; Kuei-Shu Chang-Liao
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2002
Volume: 49
Page Count: 7
Page(s): 1,151 - 1,157
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/TED.2002.1013270
Regular:

Plasma-charging damage on gate dielectrics of MOS devices is an important issue because of shrinking dimension, plasma nonuniformity, and effects on high-k gate dielectrics. A comprehensive study... View More

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