IEEE - Institute of Electrical and Electronics Engineers, Inc. - Global and local stability of circuits containing MOS transistors

Author(s): M. Tadeusiewicz
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2001
Volume: 48
Page Count: 10
Page(s): 957 - 966
ISSN (Paper): 1057-7122
DOI: 10.1109/81.940186
Regular:

The paper deals with nonlinear dynamic circuits containing MOS transistors. The problem of global and local stability of a class of these circuits is considered in detail. It is shown that any... View More

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