IEEE - Institute of Electrical and Electronics Engineers, Inc. - Gate layout and bonding pad structure of a RF n-MOSFET for low noise performance

Author(s): Cheon Soo Kim ; Jung-Woo Park ; Hyun Kyu Yu ; H. Cho
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2000
Volume: 21
Page Count: 3
Page(s): 607 - 609
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.887481
Regular:

Several 0.35 /spl mu/m n-MOSFETs with different gate geometry were analyzed to maximize the RF performance, after that the pads were shielded to ground to reduce the noise contribution of pads.... View More

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