IEEE - Institute of Electrical and Electronics Engineers, Inc. - A novel self-aligned fabrication process for microwave static induction transistors in silicon carbide

Author(s): J.P. Henning ; A. Przadka ; M.R. Melloch ; J.A. Cooper, Jr.
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2000
Volume: 21
Page Count: 3
Page(s): 578 - 580
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.887471
Regular:

A novel multiple-self-aligned fabrication process is developed for recessed gate microwave static induction transistors (SITs) in silicon carbide (SiC). This process is demonstrated by... View More

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