IEEE - Institute of Electrical and Electronics Engineers, Inc. - Anomalous diffusion of boron in silicon driven under the N/sub 2/O ambient

Author(s): Don-Gey Liu ; Wen Luh Yang ; Jiang-Shihn Tsang ; Kuo Wei Chu ; Miin-Shyue Shiau ; Yu Ming Hung
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2000
Volume: 21
Page Count: 3
Page(s): 572 - 574
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.887469
Regular:

In this letter, p/sup +//n junctions formed by a solid source of a boron-doped layer under different ambient gases will be demonstrated. In this study, it was found that the obtained junction... View More

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