IEEE - Institute of Electrical and Electronics Engineers, Inc. - NROM: A novel localized trapping, 2-bit nonvolatile memory cell

Author(s): B. Eitan ; P. Pavan ; I. Bloom ; E. Aloni ; A. Frommer ; D. Finzi
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2000
Volume: 21
Page Count: 3
Page(s): 543 - 545
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.877205
Regular:

This paper presents a novel flash memory cell based on localized charge trapping in a dielectric layer and on a new read operation. It is based on the storage of a nominal /spl sim/400 electrons... View More

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