IEEE - Institute of Electrical and Electronics Engineers, Inc. - Fabrication and characterization of metal-oxide-semiconductor field-effect transistors and gated diodes using Ta/sub 2/O/sub 5/ gate oxide

Author(s): Jing-Chi Yu ; B.C. Lai ; J.Y.-M. Lee
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2000
Volume: 21
Page Count: 3
Page(s): 537 - 539
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.877203
Regular:

N-channel metal oxide semiconductor field effect transistors (MOSFETs) using Ta/sub 2/O/sub 5/, gate oxide were fabricated. The Ta/sub 2/O/sub 5/ films were deposited by plasma enhanced chemical... View More

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