IEEE - Institute of Electrical and Electronics Engineers, Inc. - Influence of reactive ion etching on the microwave trap noise generated in Pt/n-GaAs Schottky diode interfaces

Author(s): J.M. Miranda ; C.-I. Lin ; M. Brandt ; M. Rodriguez-Girones ; H.L. Hartnagel ; J.L. Sebastian
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2000
Volume: 21
Page Count: 3
Page(s): 515 - 517
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.877194
Regular:

This work presents a systematic investigation of the influence of reactive ion etching (RIE) on the microwave noise performance of GaAs Schottky diodes. A number of devices has been fabricated by... View More

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