IEEE - Institute of Electrical and Electronics Engineers, Inc. - Demonstration of aluminum-free metamorphic InP/In/sub 0.53/Ga/sub 0.47/As/InP double heterojunction bipolar transistors on GaAs substrates

Author(s): Hong Wang ; Geok Ing Ng ; Haiqun Zheng ; Yong Zhong Xiong ; Lye Heng Chua ; Kaihua Yuan ; K. Radhakrishnan ; Soon Fatt Yoon
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2000
Volume: 21
Page Count: 3
Page(s): 427 - 429
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.863099
Regular:

We report, for the first time, the successful fabrication of aluminum-free metamorphic (MM) InP/In/sub 0.53/ Ga/sub 0.47/ As/InP double heterojunction bipolar transistors (DHBTs) on GaAs... View More

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