IEEE - Institute of Electrical and Electronics Engineers, Inc. - Interrelationship of voltage and temperature dependence of oxide breakdown for ultrathin oxides

Author(s): E.Y. Wu ; D.L. Harmon ; Liang-Kai Han
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2000
Volume: 21
Page Count: 3
Page(s): 362 - 364
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.847381
Regular:

We report that voltage acceleration of time- or charge-to-breakdown is insensitive to temperature variations over a wide range of temperature (30 to 200/spl deg/C) for oxides below 3 nm,... View More

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