IEEE - Institute of Electrical and Electronics Engineers, Inc. - A new and improved borderless contact (BLC) structure for high-performance Ti-salicide in sub-quarter micron CMOS devices

Author(s): Wen-Chau Liu ; Kong-Beng Thei ; Wei-Chou Wang ; Hsi-Jen Pan ; Shou-Gwo Wuu ; Ming-Ta Lei ; Chung-Shu Wang ; Shiou-Ying Cheng
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2000
Volume: 21
Page Count: 3
Page(s): 344 - 346
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.847375
Regular:

We demonstrate a new and improved borderless contact (BLC) Ti-salicide process for the fabrication of sub-quarter micron CMOS devices. A low-temperature chemical vapor deposition (CVD) SiO/sub... View More

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