IEEE - Institute of Electrical and Electronics Engineers, Inc. - Deep reactive ion etching for lateral field emission devices

Author(s): V. Milanovic ; L. Doherty ; D.A. Teasdale ; C. Zhang ; S. Parsa ; V. Nguyen ; M. Last ; K.S.J. Pister
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2000
Volume: 21
Page Count: 3
Page(s): 271 - 273
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.843147
Regular:

The authors describe the design, fabrication and testing of lateral field emission diodes utilizing the deep reactive ion etch (DRIE). Devices were fabricated on silicon-on-insulator (SOI)... View More

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