IEEE - Institute of Electrical and Electronics Engineers, Inc. - RuO2/GaN Schottky contact formation with superior forward and reverse characteristics

Author(s): Suk-Hun Lee ; Jae-Kyu Chun ; Jae-Jin Hur ; Jae-Seung Lee ; Gi-Hong Rue ; Young-Ho Bae ; Sung-Ho Hahm ; Yong-Hyun Lee ; Jung-Hee Lee
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2000
Volume: 21
Page Count: 3
Page(s): 261 - 263
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.843144
Regular:

This is a first time report of a ruthenium oxide (RuO/sub 2/) Schottky contact on GaN. RuO/sub 2/ and Pt Schottky diodes were fabricated and their characteristics compared. When the RuO/sub 2/... View More

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