IEEE - Institute of Electrical and Electronics Engineers, Inc. - Ultrathin-body SOI MOSFET for deep-sub-tenth micron era

Author(s): Yang-Kyu Choi ; K. Asano ; N. Lindert ; V. Subramanian ; Tsu-Jae King ; J. Bokor ; Chenming Hu
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2000
Volume: 21
Page Count: 2
Page(s): 254 - 255
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.841313
Regular:

A 40-nm-gate-length ultrathin-body (UTB) nMOSFET is presented with 20-nm body thickness and 2.4-nm gate oxide. The UTB structure eliminates leakage paths and is an extension of a conventional SOI... View More

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