IEEE - Institute of Electrical and Electronics Engineers, Inc. - Design of 25-nm SALVO PMOS devices

Author(s): H.-H. Vuong ; C.-P. Chang ; C.-S. Pai
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2000
Volume: 21
Page Count: 3
Page(s): 248 - 250
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.841311
Regular:

The concept and preliminary designs of novel self-aligned local-channel V-gate by optical lithography (SALVO) devices are presented. SALVO uses optimized local-channel doping to sharpen the... View More

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