IEEE - Institute of Electrical and Electronics Engineers, Inc. - Gate length scaling in high performance InGaP/InGaAs/GaAs pHEMTs

Author(s): P. Fay ; K. Stevens ; J. Elliot ; N. Pan
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2000
Volume: 21
Page Count: 3
Page(s): 141 - 143
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.830961
Regular:

The performance of InGaP-based pHEMTs as a function of gate length has been examined experimentally. The direct-current and microwave performance of pHEMTs with gate lengths ranging from 1.0-0.2... View More

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