IEEE - Institute of Electrical and Electronics Engineers, Inc. - A new empirical nonlinear model for HEMT-devices

Author(s): Angelov, I. ; Zirath, H. ; Rorsman, N.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1992
Conference Location: Albuquerque, NM, USA, USA
Conference Date: 1 June 1992
ISBN (Paper): 0-7803-0611-2
ISSN (Paper): 0149-645X
DOI: 10.1109/MWSYM.1992.188320
Regular:

A novel large-signal model for HEMTs (high-electron-mobility transistors) capable of modeling the current-voltage characteristic and its derivatives, including the characteristic... View More

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