IEEE - Institute of Electrical and Electronics Engineers, Inc. - MESFET nonlinearities applied to predistortion linearizer design

Author(s): Tupynamba, R.C. ; Camargo, E.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1992
Conference Location: Albuquerque, NM, USA, USA
Conference Date: 1 June 1992
ISBN (Paper): 0-7803-0611-2
ISSN (Paper): 0149-645X
DOI: 10.1109/MWSYM.1992.188148
Regular:

Three different circuit topologies of predistortion linearizers are proposed using MESFETs biased at low drain bias. The design of a C-band linearizer using two 1- mu -gate-length devices is... View More

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