IEEE - Institute of Electrical and Electronics Engineers, Inc. - HEMT models for S-parameter and noise parameter extrapolation

Author(s): Hickson, M.T. ; Gardner, P. ; Paul, D.K.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1992
Conference Location: Albuquerque, NM, USA, USA
Conference Date: 1 June 1992
ISBN (Paper): 0-7803-0611-2
ISSN (Paper): 0149-645X
DOI: 10.1109/MWSYM.1992.187966
Regular:

Four models have been developed and assessed for fitting the measured noise parameters up to 26 GHz and S-parameters up to 400 GHz for a commercial HEMT (high electron mobility transistor) chip.... View More

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