IEEE - Institute of Electrical and Electronics Engineers, Inc. - Radiation-Induced Perturbations of the Electrical Properties of the Silicon-Silicon Dioxide Interface

Author(s): H. L. Hughes
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1969
Volume: 16
Page(s): 195 - 202
ISSN (Paper): 0018-9499
ISSN (Online): 1558-1578
DOI: 10.1109/TNS.1969.4325526
Regular:

Interface-state densities and MOS transistor characteristics dependent upon such states have been studied as a function of radiation dose and type. Special MOS devices possessing doped... View More

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