IEEE - Institute of Electrical and Electronics Engineers, Inc. - An ultra-shallow link base for a double polysilicon bipolar transistor

Author(s): Hayden, J.D. ; Burnett, J.D. ; Pfiester, J.R. ; Woo, M.P.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1992
Conference Location: Minneapolis, MN, USA
Conference Date: 7 October 1992
Page(s): 96 - 99
ISBN (Paper): 0-7803-0727-5
DOI: 10.1109/BIPOL.1992.274075
Regular:

A techinque is presented for forming an ultrashallow link base in a double polysilicon bipolar transistor. This method is easily integrated into an advanced BiCMOS process, making use of a... View More

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