IEEE - Institute of Electrical and Electronics Engineers, Inc. - A Mechanism for Water Induced Excess Reverse Dark Current on Grown Germanium NV-P Junctions

Author(s): J. T. Law
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 1954
Volume: 42
Page(s): 1,367 - 1,370
ISSN (Paper): 0096-8390
DOI: 10.1109/JRPROC.1954.274567
Regular:

An ionic conduction process in the multilayers of water adsorbed on a germanium n-p junction bar is proposed to explain the increase in reverse dark current observed when the relative humidity to... View More

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