IEEE - Institute of Electrical and Electronics Engineers, Inc. - Behavior of Germanium-Junction Transistors at Elevated Temperatures and Power-Transistor Design

Author(s): L. D. Armstrong ; D. A. Jenny
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 1954
Volume: 42
Page(s): 527 - 530
ISSN (Paper): 0096-8390
DOI: 10.1109/JRPROC.1954.274812
Regular:

This paper discusses the limitations of germanium-junction transistors at elevated operating temperatures. The limiting factors are a consequence of increased thermal hole-electron pair generation... View More

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