IEEE - Institute of Electrical and Electronics Engineers, Inc. - Mesh emitter transistor

Author(s): M. Fukuta ; H. Kisaki ; S.-I. Maekawa
Sponsor(s): IEEE Publication
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 1968
Volume: 56
Page(s): 742 - 743
ISSN (Paper): 0018-9219
ISSN (Online): 1558-2256
DOI: 10.1109/PROC.1968.6366
Regular:

This letter presents a new transistor called a mesh emitter transistor (MET) which is designed for high power in a high-frequency range. The output of 10 watts at 400 MHz was obtained with 7 dB... View More

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