IEEE - Institute of Electrical and Electronics Engineers, Inc. - Carrier Scattering from Defects in Neutron-Bombarded Semiconductors

Author(s): T. M. Flanagan
Sponsor(s): IEEE Nuclear and Plasma Sciences Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1968
Volume: 15
Page(s): 42 - 46
ISSN (Paper): 0018-9499
ISSN (Online): 1558-1578
DOI: 10.1109/TNS.1968.4325029
Regular:

Recent experimental evidence for the clustering of defects in neutron-irradiated semiconductors has led to a revived interest in the model proposed by Gossick (Ref. 2). This paper presents some... View More

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