IEEE - Institute of Electrical and Electronics Engineers, Inc. - Degradation mechanism of Al-doped ZnO elements

Author(s): Zhiqing Chen ; Hengkun Xie
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1988
Conference Location: Beijing, China
Conference Date: 12 September 1988
DOI: 10.1109/ICPADM.1988.38346
Regular:

Accelerated life tests of Al-doped and undoped ZnO elements were carried out using a 50-Hz voltage, and the voltages at a current of 1 mA were measured at various temperatures. Measurements of I-V... View More

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