IEEE - Institute of Electrical and Electronics Engineers, Inc. - A 1800 V, 300 A nondestructive RBSOA tester for bipolar transistors

Author(s): Carpenter, G. ; Lee, F.C. ; Chen, D.Y.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1988
Conference Location: Kyoto, Japan, Japan
Conference Date: 11 April 1988
DOI: 10.1109/PESC.1988.18279
Regular:

The design and fabrication of a 1800 V, 300 A nondestructive transistor reverse-bias second breakdown (RBSB) tester are reported. An innovative MOSFET shunt circuit is the key to the high power... View More

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