IEEE - Institute of Electrical and Electronics Engineers, Inc. - A resistance change methodology for the study of electromigration in Al-Si interconnects

Author(s): Maiz, J.A. ; Segura, I.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1988
Conference Location: Monterey, CA, USA, USA
Conference Date: 12 April 1988
Page(s): 209 - 215
DOI: 10.1109/RELPHY.1988.23452
Regular:

A DC resistometric method has been developed that provides a substantial reduction in electromigration test times of Al-Si thin films. The technique has been used to detect relative resistance... View More

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