IEEE - Institute of Electrical and Electronics Engineers, Inc. - Migration of Fluorine Atoms and Influence on Shallow P* N Junction in BF* 2 Implanted Silicon under RTA

18th European Solid State Device Research Conference

Author(s): T.-Q. Zhang ; J.-L. Liu ; X.-Y. Yang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 1988
Conference Location: Montpellier, France, France
Conference Date: 13 September 1988
ISBN (Paper): 2868830994
Regular:

The migration of fluorine atoms in BF+2 implanted silicon under RTA has been analysed using SIMS, the microstructural defect of BF+2 implanted silicon before and after RTA... View More

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