IEEE - Institute of Electrical and Electronics Engineers, Inc. - Strained N-AlGaAs/InGaAs/N-AlGaAs selectively-doped double-heterojunction FET

Author(s): Inoue, K. ; Nishii, K. ; Matsuno, T. ; Onuma, T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1987
Conference Location: Washington, DC, USA, USA
Conference Date: 6 December 1987
Page(s): 422 - 425
DOI: 10.1109/IEDM.1987.191448
Regular:

High-current driving strained N-Al0.27Ga0.73As /In0.15Ga0.85As/N-Al0.15Ga0.85As selectively-doped double-heterojunction FETs have been fabricated using highly conductive epitaxial... View More

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