IEEE - Institute of Electrical and Electronics Engineers, Inc. - A High Density 4Mbit DRAM Process Using a Fully Overlapping Bitline Contact (FOBIC) Trench Cell

Author(s): Kusters, K. H. ; Enders, G. ; Meyberg, W. ; Benzinger, H. ; Hasler, B. ; Higelin, G. ; Rohl, S. ; Muhlhoff, H. M. ; Muller, W.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 1987
Conference Location: Karuizawa, Japan, Japan
Conference Date: 22 May 1987
Page(s): 93 - 94
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