IEEE - Institute of Electrical and Electronics Engineers, Inc. - 2.5-Watt and 5- Watt Internally Matched GaAs FETs for 10.7-11.7 and 14-14.5 GHz Bands

Author(s): Avasarala, M. ; Day, D.-Y.S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1986
Conference Location: Baltimore, MD, USA, USA
Conference Date: 2 June 1986
Page(s): 455 - 458
ISSN (Paper): 0149-645X
DOI: 10.1109/MWSYM.1986.1132219
Regular:

A new 7.2mm GaAs FET chip with high gain, power, efficiency and low thermal resistance has been developed. Internally matched packaged devices using one and two such FETs have been developed for... View More

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