IEEE - Institute of Electrical and Electronics Engineers, Inc. - Power GaAs FET RF Life Test using Temperature-Compensated Electrical Stressing

Author(s): Russell, K. J. ; Dhiman, J. K.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 1986
Conference Location: Anaheim, CA, USA, USA
Conference Date: 1 April 1986
Page(s): 150 - 156
ISSN (Paper): 0735-0791
DOI: 10.1109/IRPS.1986.362126
Regular:

GaAs FETs were aged in RF operation, while keeping the electrical stress on the WETs like that in a typical application. Lifetimes measured were significantly lower than those predicted by life... View More

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