IEEE - Institute of Electrical and Electronics Engineers, Inc. - Novel submicron MOS devices by self-aligned nitridation of silicide (Sanicide)

Author(s): Kaneko, H. ; Koyanagi, M. ; Shimizu, S. ; Kubota, Y. ; Kishino, S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1985
Conference Location: Washington, DC, USA, USA
Conference Date: 1 December 1985
Page(s): 208 - 211
DOI: 10.1109/IEDM.1985.190932
Regular:

A new MOS technology with the following advantages has been investigated: TiSi2is formed by being self-aligned to source and drain regions by silicidation; and TiN is formed by self-aligned to... View More

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