IEEE - Institute of Electrical and Electronics Engineers, Inc. - Characterization of Si/SiO 2 interface degradation due to hot-carrier injection

Author(s): Sabnis, A.G. ; Nelson, J.T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1985
Conference Location: Washington, DC, USA, USA
Conference Date: 1 December 1985
Page(s): 52 - 55
DOI: 10.1109/IEDM.1985.190889
Regular:

Short-channel length MOSFETs fabricated by various n-channel Si-gate technologies have been subjected to dc and pulse aging conditions. The degradation due to injection of hot-holes is found to be... View More

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