IEEE - Institute of Electrical and Electronics Engineers, Inc. - X-Band Noise Parameters of HEMT Devices at 300K and 12.5K

Author(s): Weinreb, S. ; Pospieszalski, M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1985
Conference Location: St. Louis, MO, USA, USA
Conference Date: 4 June 1985
Page(s): 539 - 542
ISSN (Paper): 0149-645X
DOI: 10.1109/MWSYM.1985.1132033
Regular:

The four noise parameters of room-temperature and cryogenically-cooled HEMT's have been investigated. Two previously described structures, the quantum- well HEMT [1] and the... View More

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