IEEE - Institute of Electrical and Electronics Engineers, Inc. - Investigation Into GaAs Power MESFET Surface Degradation

23rd International Reliability Physics Symposium

Author(s): J.M. Dumas ; D. Lecrosnier ; J.F. Bresse
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 1985
Conference Location: Orlando, FL, USA, USA
Conference Date: 25 March 1985
Page(s): 39 - 44
ISSN (Paper): 0735-0791
DOI: 10.1109/IRPS.1985.362072
Regular:

Long term degradation of GaAs power MESFETs is shown to be surface-induced. - C.V.D. SiO2 protected FETs are investigated in part 1 : using micro-Auger analysis (beam spot size ≃0.1 - 0.2... View More

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