IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effects of field boron dose on substrate current in narrow channel LDD MOSFETs

Author(s): Sawada, S. ; Matsumoto, Y. ; Shinozaki, S. ; Ozawa, O.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1984
Conference Location: San Francisco, CA, USA, USA
Conference Date: 9 December 1984
Page(s): 778 - 781
DOI: 10.1109/IEDM.1984.190842
Regular:

Effects of field boron dose on substrate currents in narrow channel LDD NMOSFET's are investigated. When field boron is heavily introduced, the substrate peak currents show marked increase.... View More

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