IEEE - Institute of Electrical and Electronics Engineers, Inc. - A highly interdigitated GTO power switch with recessed gate structure

Author(s): Roggwiller, P. ; Gobrecht, J. ; Voboril, J. ; Broich, B.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1984
Conference Location: San Francisco, CA, USA, USA
Conference Date: 9 December 1984
Page(s): 439 - 442
DOI: 10.1109/IEDM.1984.190745
Regular:

A highly interdigitated power GTO has been realized with a new technology based on reactive ion etching. The characteristic feature of the device are 50 µm wide vertically walled cathode fingers... View More

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