IEEE - Institute of Electrical and Electronics Engineers, Inc. - A Study of the Relation Between Device Low-Frequency Noise and Oscillator Phase Noise for GaAs MESFETs

Author(s): Rohdin, H. ; Chung-Yi Su ; Stolte, C.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1984
Conference Location: San Francisco, CA, USA, USA
Conference Date: 30 May 1984
Page(s): 267 - 269
ISSN (Paper): 0149-645X
DOI: 10.1109/MWSYM.1984.1131877
Regular:

An analytical model for oscillator noise resulting from active device LF noise is presented. We apply it to a number of GaAs MESFET oscillators finding good quantitative agreement, and... View More

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