IEEE - Institute of Electrical and Electronics Engineers, Inc. - Reduction of VT Shift Due to Avalanche-Hot-Carrier Injection using Graded Drain Structures in Submicron N-Channel MOSFET

Author(s): Noyori, M. ; Nakata, Y. ; Odanaka, S. ; Yasui, J.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 1984
Conference Location: Las Vegas, NV, USA, USA
Conference Date: 3 April 1984
Page(s): 205 - 209
ISSN (Paper): 0735-0791
DOI: 10.1109/IRPS.1984.362046
Regular:

In order to evaluate the VT shift due to hot-carriers in submicron n-channel FETs with several kinds of graded junction structures as compared with a conventional structures, long term stress... View More

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