256-1963 IEEE Test Procedure for Semiconductor Diodes

inactive - Inactive: Withdrawn
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Organization: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 20 December 1963
Status: inactive
Page(s): 1 - 10
ISBN (Online): 978-1-5044-0227-9
DOI: 10.1109/IEEESTD.1963.7385415

Abstracts

Regular

This Standard recommends and describes methods of measurement of the important electrical characteristics of semiconductor diodes, For the purpose of this Standard, a semiconductor diode is defined as: "A semiconductor device having two terminals and exhibiting a nonlinear voltage-current characteristic ; in more restricted usage, a semiconductor device which has the asymmetrical voltage-current characteristic exemplified by a single p-n junction." Methods of test are described for static, small-signal and pulse parameters. Many of the terms considered herein have been set down in AIEE and IRE Standards, particularly in 60 IRE 28.S1 and AIEE No. 425.

Document History

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(1.1) This standard specifies the minimum requirements for the content and duration of signals recorded prior to the start of the recorded program material to permit setup and adjustment of equipment for optimum performance during reproduction. (1.2) The standard also specifies a visual and aural co...

256-1963 - IEEE Test Procedure for Semiconductor Diodes
December 20, 1963 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This Standard recommends and describes methods of measurement of the important electrical characteristics of semiconductor diodes, For the purpose of this Standard, a semiconductor diode is defined as: "A semiconductor device having two terminals and exhibiting a nonlinear voltage-current characteri...

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